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BFG505; BFG505/X
NPN 9 GHz wideband transistors
Rev. 04 -- 22 November 2007 Product data sheet
IMPORTANT NOTICE
Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV).
PINNING DESCRIPTION PIN BFG505 1 2 3 4 collector base emitter emitter BFG505/X collector emitter base emitter
handbook, 2 columns 4
3
DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package.
1 2
MSB014
MARKING TYPE NUMBER BFG505 BFG505/X QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain Ts 130 C VCE = 6 V; IC = 5 mA VCB = 6 V; IC = ic = 0; f = 1 MHz VCE = 6 V; IC = 5 mA; f = 1 GHz VCE = 6 V; IC = 5 mA; Tamb = 25 C; f = 900 MHz VCE = 6 V; IC = 5 mA; Tamb = 25 C; f = 2 GHz S212 F insertion power gain noise figure VCE = 6 V; Ic = 5 mA; Tamb = 25 C; f = 900 MHz s = opt; VCE = 6 V; Ic = 1.25 mA; Tamb = 25 C; f = 900 MHz s = opt; VCE = 6 V; Ic = 5 mA; Tamb = 25 C; f = 900 MHz s = opt; VCE = 6 V; Ic = 1.25 mA; Tamb = 25 C; f = 2 GHz collector-emitter voltage RBE = 0 CONDITIONS open emitter CODE %ME %MK
Top view
Fig.1 Simplified outline SOT143B.
MIN. - - - - 60 - - - - 16 - - - - - - -
TYP.
MAX. 20 15 18 150 250 - - - - - 1.7 2.1 -
UNIT V V mA mW pF GHz dB dB dB dB dB dB
120 0.2 9 20 13 17 1.2 1.6 1.9
Rev. 04 - 22 November 2007
2 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point note 1 CONDITIONS VALUE 290 UNIT K/W PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature range junction temperature Ts 130 C; see Fig.2; note 1 RBE = 0 open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 20 15 2.5 18 150 150 175 V V V mA mW C C UNIT
handbook, halfpage
200
MRA638-1
Ptot (mW) 150
100
50
0 0 50 100 150 Ts (C) 200
Fig.2 Power derating curve.
Rev. 04 - 22 November 2007
3 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Ce Cc Cre fT GUM PARAMETER collector cut-off current DC current gain emitter capacitance collector capacitance feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS VCB = 6 V; IE = 0 IC = 5 mA; VCE = 6 V; see Fig.3 IC = ic = 0 VEB = 0.5 V; f = 1 MHz VCB = 6 V; IE = ie = 0; f = 1 MHz IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4 IC = 5 mA; VCE = 6 V; f = 1 GHz; see Fig.5 IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz Ic = 5 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz S212 F insertion power gain noise figure Ic = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 5 mA; VCE = 6 V; Tamb = 25 C; f = 900 MHz s = opt; IC = 1.25 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz PL1 ITO Notes output power at 1 dB gain compression third order intercept point IC = 5 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; f = 900 MHz note 2 - 60 - - - - - - 16 - - - - - MIN. - 120 0.4 0.3 0.2 9 20 13 17 1.2 1.6 1.9 4 10 TYP. MAX. 50 250 - - - - - - - 1.7 2.1 - - - pF pF pF GHz dB dB dB dB dB dB dBm dBm UNIT nA
S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB. ( 1 - S 11 2 ) ( 1 - S 22 2 ) 2. VCE = 6 V; IC = 5 mA; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at 2fp - fq = 898 MHz and 2fq - fp = 904 MHz.
Rev. 04 - 22 November 2007
4 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
handbook, halfpage
250
MRA639
handbook, halfpage
0.4
MRA640
hFE 200
Cre (pF) 0.3
150 0.2 100 0.1 50
0 10-3
10-2
10-1
1
10
102 IC (mA)
0 0 2 4 6 8 10 VCB (V)
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current.
Fig.4
Feedback capacitance as a function of collector-base voltage.
handbook, halfpage
12
MRA641
handbook, halfpage
25
MRA642
fT (GHz) 8
VCE = 6 V VCE = 3 V
gain (dB) 20
GUM
MSG 15
10 4 5
0 10-1
1
10
IC (mA)
102
0 0 4 8 IC (mA) VCE = 6 V; f = 900 MHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. 12
Tamb = 25 C; f = 1 GHz.
Fig.5
Transition frequency as a function of collector current.
Fig.6 Gain as a function of collector current.
Rev. 04 - 22 November 2007
5 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
handbook, halfpage
25
MRA643
MRA644
handbook, halfpage
50
gain (dB) 20
gain (dB) 40 MSG
GUM
15
Gmax
30
MSG
10
GUM 20
5
10
0 0 4 8 IC (mA) VCE = 6 V; f = 2 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. 12
0 10
102
103
f (MHz)
104
VCE = 6 V; IC = 1.25 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.
Fig.7 Gain as a function of collector current.
Fig.8 Gain as a function of frequency.
MRA645
handbook, halfpage
50
handbook, halfpage
5
MRA650
gain (dB) 40
GUM
Fmin (dB) 4
f = 900 MHz
20 Gass (dB) 15
1000 MHz Gass 2000 MHz
MSG 30 3
10
20 Gmax
2
2000 MHz 1000 MHz 900 MHz 500 MHz Fmin
5
10
1
0
0 10
102
103
f (MHz)
104
0 10-1
1
IC (mA)
-5 10
VCE = 6 V; IC = 5 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.
VCE = 6 V.
Fig.9 Gain as a function of frequency.
Fig.10 Minimum noise figure and associated available gain as functions of collector current.
Rev. 04 - 22 November 2007
6 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
I andbook, halfpage C = 1.25 mA Fmin (dB) 4
5
MRA651
5 mA Gass
20 Gass (dB) 15
3
10
2 5 mA 1 1.25 mA 0 102
5
Fmin
0
103
f (MHz)
-5 104
VCE = 6 V.
Fig.11 Minimum noise figure and associated available gain as functions of frequency.
handbook, full pagewidth
pot. unst. region
90 1.0 1 45 0.8 0.6
135
0.5
2
stability circle 0.2 Fmin = 1. 2 dB 0.2 0.5 1 OPT F = 1.5 dB 2 5 F = 2 dB F = 3 dB 5
0.4 0.2 0 0
180
0
0.2
5
-135
0.5 1
2
-45
MRA652
1.0
Zo = 50 . VCE = 6 V; Ic = 1.25 mA; f = 900 MHz.
-90
Fig.12 Noise circle figure.
Rev. 04 - 22 November 2007
7 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
handbook, full pagewidth
pot. unst. region
90 1.0 1 45 0.8 0.6 OPT 0.4 0.2
135
0.5
2
0.2 stability circle 180 0 0.2 0.5
Fmin = 1. 9 dB F = 2.5 dB 1 2 F = 3 dB F = 4 dB
5
5
0
0
0.2
5
-135
0.5 1
2
-45
MRA653
1.0
-90 Zo = 50 . VCE = 6 V; Ic = 1.25 mA; f = 2000 MHz.
Fig.13 Noise circle figure.
Rev. 04 - 22 November 2007
8 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 1 2 5 40 MHz 0 0
0.2 3 GHz 180 0 0.2 0.5
5
0.2
5
-135
0.5 1
2
-45
MRA646
1.0
VCE = 6 V; IC = 5 mA. Zo = 50 .
-90
Fig.14 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90
135
45
40 MHz
3 GHz
180 15 12 9 6 3
0
-135
-45
-90 VCE = 6 V; IC = 5 mA.
MRA647
Fig.15 Common emitter forward transmission coefficient (S21).
Rev. 04 - 22 November 2007
9 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
handbook, full pagewidth
90
135
45
3 GHz
180 0.25
40 MHz 0.20 0.15 0.10 0.05
0
-135
-45
-90 VCE = 6 V; IC = 5 mA.
MRA648
Fig.16 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
90 1.0 1 135 0.5 2 45 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5
40 MHz
0.2
5
0
0
0.2
3 GHz
5
-135
0.5 1
2
-45
MRA649
1.0
VCE = 6 V; IC = 5 mA. Zo = 50 .
-90
Fig.17 Common emitter output reflection coefficient (S22).
Rev. 04 - 22 November 2007
10 of 13
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505; BFG505/X
PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B
D
B
E
A
X
y vMA HE
e bp wM B
4
3
Q
A
A1 c
1
b1 e1
2
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT143B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
Rev. 04 - 22 November 2007
11 of 13
NXP Semiconductors
BFG505; BFG505/X
NPN 9 GHz wideband transistors
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 04 - 22 November 2007
12 of 13
NXP Semiconductors
BFG505; BFG505/X
NPN 9 GHz wideband transistors
Revision history
Revision history Document ID BFG505_X_N_4 Modifications: BFG505_X_3 (9397 750 04348) BFG505XR_CNV_2 BFG505XR_1 Release date 20071122 Data sheet status Product data sheet Product specification Product specification Product specification Change notice Supersedes BFG505_X_3 BFG505XR_CNV_2 BFG505XR_1 -
*
Marking table on page 2; changed code
19981002 19950901 19921101
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 November 2007 Document identifier: BFG505_X_N_4

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